 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Infrared Light Emitting Diodes LN175 GaAlAs Infrared Light Emitting Diode Unit : mm Not soldered 0.8 max. For optical control systems 1.50.2 Features High-power output, high-efficiency : PO = 12 mW (typ.) Emitted light spectrum suited for silicon photodetectors : P = 900 nm (typ.) Good radiant power output linearity with respect to input current Wide directivity : = 120 deg. (typ.) 3.90.25 4.50.15 3.50.15 2.10.15 1.60.15 0.80.1 12.8 min. (2.95) 2-1.20.3 2-0.450.15 0.450.15 1 2.54 2 Absolute Maximum Ratings (Ta = 25C) Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature * Symbol PD IF IFP * Ratings 170 100 2 3 -25 to +85 - 40 to +100 Unit mW mA A V C C 1: Cathode 2: Anode VR Topr Tstg f = 100 Hz, Duty cycle = 0.1 % Electro-Optical Characteristics (Ta = 25C) Parameter Radiant power Peak emission wavelength Spectral half band width Forward voltage (DC) Reverse current (DC) Capacitance between pins Response time Half-power angle Symbol PO P VF IR Ct tr , t f Conditions IF = 100mA IF = 100mA IF = 100mA IF = 100mA VR = 3V VR = 0V, f = 1MHz IF = 100mA The angle in which radiant intencity is 50% min 7 typ 12 900 70 1.4 50 700 120 max Unit mW nm nm 1.7 10 V A pF ns deg. 1 Infrared Light Emitting Diodes LN175 IF -- Ta 120 10 2 IFP -- Duty cycle tw = 10s Ta = 25C 10 IFP -- VF tw = 10s f = 100Hz Ta = 25C IF (mA) IFP (A) 10 Allowable forward current 80 IFP (A) Pulse forward current 1 10 10 2 100 1 Pulse forward current 60 1 40 10 -1 10 -1 20 0 - 25 0 20 40 60 80 100 10 -2 10 -1 10 -2 0 1 2 3 4 5 Ambient temperature Ta (C ) Duty cycle (%) Forward voltage VF (V) PO -- IFP 10 3 (1) tw = 10s f = 100Hz (2) DC Ta = 25C 1.6 VF -- Ta 10 PO -- Ta IF = 100mA Relative radiant power PO VF (V) 10 2 1.2 10mA 1mA 0.8 Forward voltage 10 (1) Relative radiant power PO IF = 100mA 1 1 (2) 0.4 10 -1 10 -2 10 -3 10 -2 10 -1 1 10 0 - 40 0 40 80 120 10 -1 - 40 0 40 80 Pulse forward current IFP (A) Ambient temperature Ta (C ) Ambient temperature Ta (C ) P -- Ta 960 IF = 100mA 100 Spectral characteristics IF = 100mA Ta = 25C Directivity characteristics 0 10 20 30 Relative radiant intensity(%) Peak emission wavelength P (nm) 40 50 60 70 80 Relative radiant intensity (%) 940 80 150 100 920 60 50 900 40 90 100 110 880 20 120 130 860 - 40 0 40 80 120 0 780 820 860 900 940 980 1020 Ambient temperature Ta (C ) Wavelength (nm) 2 |
Price & Availability of LN175
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |